Flash memory cell and method of fabricated the same

Details Flash memory cell and method of fabricated the same Flash memory cell and method of fabricated the same

1997-10-31

2000-05-09

Booth, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

257320, 438263, H01L 218247

Patent

active

060603593

ABSTRACT:
A flash memory cell and a method of fabricating the same are disclosed in the present invention. A method of fabricating a flash memory cell having a substrate includes the steps of forming a buried data line in the substrate, forming an insulating layer on the substrate including the buried data line, forming an erase gate on the insulating layer, forming an isolation layer by etching the insulating layer with the erase gate as a mask, forming a floating gate having an indentation at least, the indentation of the floating gate corresponding to the erase gate, and forming a control gate on the floating gate.
A flash memory cell includes a substrate, first and second buried data lines in the substrate, an isolation layer on the substrate, a floating gate including a indentation at least on the substrate between the first and second buried data lines, an erase gate over the isolation layer, a part of the erase gate being inserted into the indentation, and a control gates on the floating gate.

REFERENCES:
patent: 4099196 (1978-07-01), Simko
patent: 5070032 (1991-12-01), Yuan et al.
patent: 5268319 (1993-12-01), Harari
patent: 5544103 (1996-08-01), Lambertson
patent: 5643814 (1997-07-01), Chung
patent: 5686332 (1997-11-01), Hong

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