Flash memory cell and method for manufacturing the same

Details Flash memory cell and method for manufacturing the same Flash memory cell and method for manufacturing the same

2007-08-07

2007-08-07

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S296000, C257SE21680

Reexamination Certificate

active

11315148

ABSTRACT:
An active region and a trench region are formed on a semiconductor substrate. The trench region is filled with a dielectric material to form an isolation layer. Oxide and polysilicon layers are formed on the semiconductor substrate. A second polysilicon layer, a second oxide layer, and a first polysilicon layer are patterned to form a plurality of gate lines. Deep ion implantation in a deep portion of the active region is performed using a self-aligned source mask. The active region and the trench region are exposed through the self-aligned source mask by etching the isolation layer between the plurality of gate lines using the self-aligned source mask to form a common source region. Ions are implanted in the common source region using the self-aligned source mask.

REFERENCES:
patent: 6218265 (2001-04-01), Colpani
patent: 6437397 (2002-08-01), Lin et al.
patent: 6596586 (2003-07-01), Yang et al.

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