Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-05-31
2005-05-31
Tran, Michael (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S266000, C438S269000, C438S962000, C438S979000, C438S275000, C438S258000, C438S528000
Reexamination Certificate
active
06900099
ABSTRACT:
A flash memory cell. The memory cell includes a substrate, a floating gate, a control gate, and a source/drain region. The floating gate, disposed over the substrate and insulated from the substrate, has a plurality of hut structures. The control gate is disposed over the floating gate and insulated from the floating gate. The source/drain region is formed in the substrate. This invention further includes a method of fabricating a flash memory cell. First, a polysilicon layer and a germanium layer are successively formed over a substrate and insulated from the substrate. Subsequently, the substrate is annealed to form a germanium layer having a plurality of hut structures on the polysilicon layer to serve as a floating gate with the polysilicon layer. Next, a control gate is formed over the floating gate and insulated from the floating gate. Finally, a source/drain region is formed in the substrate.
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Berry Renee R.
Nanya Technology Corporation
Quintero Law Office
Tran Michael
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