Flash memory and methods of fabricating the same

Details Flash memory and methods of fabricating the same Flash memory and methods of fabricating the same

2007-06-26

2008-05-20

Gurley, Lynne (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S211000, C438S257000, C438S266000, C438S260000, C438S262000, C257SE21205, C257SE21624

Reexamination Certificate

active

07374989

ABSTRACT:
Flash memory and methods of fabricating the same are disclosed. An illustrated example flash memory includes a first source formed within a semiconductor substrate; an epitaxial layer formed on an upper surface of the semiconductor substrate; an opening formed within the epitaxial layer to expose the first source; a floating gate device formed inside the opening; and a select gate device formed on the epitaxial layer at a distance from the floating gate device.

REFERENCES:
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patent: 6207992 (2001-03-01), Mori
patent: 6635533 (2003-10-01), Chang et al.
patent: 6803276 (2004-10-01), Kim et al.
patent: 6974739 (2005-12-01), Ding
patent: 7060565 (2006-06-01), Ding
patent: 1992-167372 (1992-06-01), None

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