Flash memory and method of fabricating the same

Details Flash memory and method of fabricating the same Flash memory and method of fabricating the same

2011-03-15

2011-03-15

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S257000, C438S424000, C438S593000, C257SE21209, C257SE21545

Reexamination Certificate

active

07906396

ABSTRACT:
In a method of fabricating a flash memory, a substrate with isolation structures formed therein and a dielectric layer and a floating gate formed thereon between isolation structures is provided. A mask layer is formed on the substrate, covering the isolation structures in a periphery region and the isolation structure in a cell region adjacent to the periphery region. The isolation structures in the cell region not covered by the mask layer are partially removed. Therefore, a first height difference is between surfaces of the isolation structures in the periphery region and a surface of the dielectric layer, and between a surface of the isolation structure in the cell region adjacent to the periphery region and the surface of the dielectric layer. A second height difference smaller than the first height difference is between surfaces of other isolation structures in the cell region and the surface of the dielectric layer.

REFERENCES:
patent: 6762095 (2004-07-01), Hsieh
patent: 2007/0161187 (2007-07-01), Hwang et al.

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