Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-11-09
2008-12-16
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21179
Reexamination Certificate
active
07465629
ABSTRACT:
Provided are a flash memory and a method for manufacturing the same. The flash memory includes a semiconductor substrate having a device isolation region and an active region; a stacked gate on the semiconductor substrate; an insulation layer covering the semiconductor substrate and the stacked gate; a drain contact penetrating the insulation layer on one side of the stacked gate; and a source line penetrating the insulation layer on an opposite side of the stacked gate.
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Seung Uk Choi, Bong Gil Kim, Gi Jun Kim, and Gi Seok Kim: Method for Fabricating Flash Memory Device; Korean Patent Publication No. 1020020055881 A; Published on Jul. 10, 2002; Korean Patent Abstracts; Korean Intellectual Property Office, Republic of Korea.
Bong Gil Kim, Gi Jun Kim, Geun U Lee, Seong Gi Park; Method of Fabricationg Semiconductor Devices; Korean Patent Publication No. 1020020056141 A; Published on Jul. 10, 2002; Korean Patent Abstracts; Korean Intellectual Property Office, Republic of Korea.
Office Action, Korean Patent Application No. 10-2005-0106813; 2 Pgs.; Dated Nov. 24, 2006; Korean Intellectual Property Office, Republic of Korea.
Booth Richard A.
Dongbu Electronics Co. Ltd.
Fortney Andrew D.
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