Flash EEPROM cell and method of manufacturing the same

Details Flash EEPROM cell and method of manufacturing the same Flash EEPROM cell and method of manufacturing the same

1997-03-11

1998-04-07

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438264, 438266, H01L 21336

Patent

active

057364435

ABSTRACT:
This invention discloses a flash EEPROM cell and method of manufacturing the same, in which the flash EEPROM cell has two control gates which are symmetrical about a floating gate.

REFERENCES:
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patent: 5476801 (1995-12-01), Keshtbod
patent: 5494838 (1996-02-01), Chang et al.
patent: 5556799 (1996-09-01), Hing
patent: 5597751 (1997-01-01), Wang
patent: 5643814 (1997-07-01), Chung

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