Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-04-05
2011-04-05
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S314000, C257SE21209, C257S021000, C438S593000
Reexamination Certificate
active
07919370
ABSTRACT:
A flash device and a manufacturing method thereof are provided. An ONO pattern can be formed on a floating gate, and a control gate can be formed on the ONO pattern. The ONO pattern can be formed with a portion that projects farther out than the sides of the floating gate and the control gate.
REFERENCES:
patent: 5342801 (1994-08-01), Perry et al.
patent: 2007/0007578 (2007-01-01), Li et al.
patent: 10-2000-0068363 (2001-06-01), None
Dongbu Hi-Tek Co., Ltd.
Saliwanchik Lloyd & Eisenschenk
Vu David
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