Flash device and the manufacturing method

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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Details

C257S314000, C257SE21209, C257S021000, C438S593000

Reexamination Certificate

active

07919370

ABSTRACT:
A flash device and a manufacturing method thereof are provided. An ONO pattern can be formed on a floating gate, and a control gate can be formed on the ONO pattern. The ONO pattern can be formed with a portion that projects farther out than the sides of the floating gate and the control gate.

REFERENCES:
patent: 5342801 (1994-08-01), Perry et al.
patent: 2007/0007578 (2007-01-01), Li et al.
patent: 10-2000-0068363 (2001-06-01), None

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