Flash cell using a piezoelectric effect

Details Flash cell using a piezoelectric effect Flash cell using a piezoelectric effect

2007-03-20

2007-03-20

Ngô, Ngân V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

C257SE27006

Reexamination Certificate

active

11160332

ABSTRACT:
The flash cell includes a silicon substrate; a floating gate formed on a predetermined area of the silicon substrate; a control gate formed on the floating gate and the silicon substrate; a piezoelectric layer formed on the control gate; and an upper electrode formed on the piezoelectric layer. The flash cell brings the control gate in contact with the floating gate, instead of electrically removing electrons contained in the floating gate, resulting in a charge equilibrium state. Therefore, the flash cell completely solves the over-erasing problem. If a voltage signal is applied to the flash cell, the flash cell uses the displacement of piezoelectric/electrostrictive materials. The displacement occurs according to the received voltage, such that the flash cell implements at high speed compared to conventional electric erasing methods.

REFERENCES:
patent: 4589009 (1986-05-01), Motamedi
patent: 5831299 (1998-11-01), Yokoyama et al.
patent: 6146949 (2000-11-01), Wu
patent: 6232180 (2001-05-01), Chen
patent: 6858444 (2005-02-01), Ahn et al.

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