Flash assisted annealing

Details Flash assisted annealing Flash assisted annealing

2007-05-29

2007-05-29

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21200

Reexamination Certificate

active

10210866

ABSTRACT:
The present disclosure relates to a rapid thermal processing system that may be useful for processing semiconductor devices. A flash lamp may be utilized to provide pulse heating of a semiconductor for annealing or other purposes. A sensor may be provided to sense a characteristic of a semiconductor when a pre-pulse is applied to the semiconductor. Subsequent pulses may then be adjusted based on the characteristic sensed by the sensor.

REFERENCES:
patent: 4915765 (1990-04-01), Metters
patent: 5474940 (1995-12-01), Tsukamoto
patent: 5612251 (1997-03-01), Lee
patent: 6179465 (2001-01-01), Yam
patent: 6222990 (2001-04-01), Guardado et al.
patent: 6482199 (2002-11-01), Neev
patent: 6570656 (2003-05-01), Owens et al.
patent: 6849831 (2005-02-01), Timans et al.
patent: 7015422 (2006-03-01), Timans
patent: 2002/0137311 (2002-09-01), Timans

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