Five channel fin transistor and method for fabricating the same

Details Five channel fin transistor and method for fabricating the same Five channel fin transistor and method for fabricating the same

2006-06-27

2009-06-16

Garber, Charles D. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S259000, C438S593000, C257SE21624

Reexamination Certificate

active

07547600

ABSTRACT:
A semiconductor device comprises a substrate defining a recessed active region and a fin active region connected to the recessed active region and extending above the recessed active region. The fin active region includes first, second, third, fourth, and fifth sides. The first and second sides are proximate the recessed active region. The fifth side is an upper side of the fin active region. The third side is provided between the first side and the fifth side. The fourth side is provided between the second side and the fifth side. A gate insulation layer is formed over the first, second, third, fourth, and fifth sides of the fin active region. A gate electrode layer is formed over the gate insulation layer to substantially surround the first, second, third, fourth, and fifth sides of the fin active region. The first, third, and fifth sides have substantially different slopes. The third and fourth sides are curved surfaces.

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State Intellectual Property Office of People's Republic of China; Office Action dated Jun. 6, 2008; Application No. 200610150790.7.

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