Fitting for an ion source assembly

Radiant energy – Ion generation – Arc type

Patent

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Details

3133621, H01J 2700

Patent

active

056043503

ABSTRACT:
An improved ion source assembly in an ion implant machine is provided that can withstand thermal stress and remain gas leak proof. The ion source assembly is comprised of a vaporizer with a tubular conduit at one end, a fitting, and an arc chamber. The improvement being leak-proof connections: (1) between the conduit and the fitting and (2) between the fitting and an arc chamber. The fitting has a chamber through the center. The chamber has a larger diameter at the back end than at the front end and a central tapered portion connecting the front end and back end portions. The conduit is fit into the back end of the chamber thereby forming a first gas leak proof connection. The fitting has an outer tapered from end portion and the arc chamber has a tapered opening. The tapered front end of the fitting engages the tapered opening of the arc chamber forming a second gas leak proof connection thereby providing a gas leak proof ion source assembly.

REFERENCES:
patent: 2873375 (1959-02-01), Dorward
patent: 4016421 (1977-04-01), Hull et al.
patent: 4296330 (1981-10-01), Thomson
patent: 4578589 (1986-03-01), Aithen
patent: 4894546 (1990-01-01), Fukui et al.
patent: 5497006 (1996-03-01), Sferlazzo et al.
patent: 5523652 (1996-06-01), Sferlazzo et al.
VLSI Technology by S. M. Sze, Published by McGraw-Hill Book Co. Singapore, 1988, pp. 348-351.

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