FinFETs with long gate length at high density

Details FinFETs with long gate length at high density FinFETs with long gate length at high density

2007-02-27

2007-02-27

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Reexamination Certificate

active

10905615

ABSTRACT:
A method of manufacturing fin-type field effect transistors (FinFETs) forms a silicon layer above a substrate, forms a mask pattern above the silicon layer using a multi-step mask formation process, patterns the silicon layer into silicon fins using the mask pattern such that the silicon fins only remain below the mask pattern, removes the mask pattern to leave the fins on the substrate, and forms gate conductors over the fins at a non-perpendicular angle to the fins.

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