Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-09-11
2007-09-11
Smoot, Stephen W. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S412000, C257S413000, C257SE29259
Reexamination Certificate
active
10937246
ABSTRACT:
A fin field effect transistor (FinFET) includes a first gate and a second gate. The first gate has a vertical part that is defined by sidewalls of a silicon fin and sidewalls of a capping pattern disposed on the silicon fin and a horizontal part horizontally extends from the vertical part. The second gate is made of a low-resistivity material and is in direct contact with the horizontal part of the first gate. A channel may be controlled due to the first gate, and a device operating speed may be enhanced due to the second gate. Related fabrication methods also are described.
REFERENCES:
patent: 5844278 (1998-12-01), Mizuno et al.
patent: 6413802 (2002-07-01), Hu et al.
patent: 7105934 (2006-09-01), Anderson et al.
patent: 2003/0113970 (2003-06-01), Fried et al.
Kedzierski et al.,Metal-Gate FinFET and Fully-Depleted SOI Devices Using Total Gate Silicidation,International Electron Devices Meeting, Dec. 8-11, 2002, pp. 247-250.
Yu et al.,FinFET Scaling to 100nm Gate Length,International Electron Devices Meeting, Dec. 8-11, 2002, pp. 251-254.
Choi Si-Young
Jung In-Soo
Lee Byeong-Chan
Lee Deok-Hyung
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
Smoot Stephen W.
LandOfFree
Finfets having first and second gates of different... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Finfets having first and second gates of different..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Finfets having first and second gates of different... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3721367