FinFETs (Fin Field Effect Transistors)

Details FinFETs (Fin Field Effect Transistors) FinFETs (Fin Field Effect Transistors)

2005-11-29

2005-11-29

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S595000, C257S346000

Reexamination Certificate

active

06969659

ABSTRACT:
A FinFET structure that prevents parasitic electrical leakages between its gate region and its fin region and between its gate region and its epitaxial region (source/drain regions). The structure is formed by first forming a fin region on top of an electrically insulating layer. Next, a gate stack having gate spacers thereon is formed on top of and electrically insulated from the fin region. Then, the final S/D (source/drain) regions are formed by epitaxially growing a semiconductor material from the two ends of the fin region not covered by the gate stack. Next, another electrically insulating layer is formed on top of the structure except the gate spacers. Next, the gate spacers and portions of the gate stack beneath them are replaced with a dielectric material.

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