FinFETs and nonvolatile memory devices including FinFETs

Details FinFETs and nonvolatile memory devices including FinFETs FinFETs and nonvolatile memory devices including FinFETs

2006-06-23

2009-02-24

Wilczewski, M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

07495285

ABSTRACT:
A FinFET includes a fin that is on a substrate and extends away from the substrate. A device isolation layer is disposed on the substrate on both sides of the fin. An insulating layer is between the fin and the substrate. The insulating layer is directly connected to the device isolation layer and has a different thickness than the device isolation layer. A gate electrode crosses over the fin. A gate insulating layer is between the gate electrode and the fin. Source and drain regions are on the fins and on opposite sides of the gate electrode. Related nonvolatile memory devices that include FinFETs and methods of making FinFETs and nonvolatile memory devices are also disclosed.

REFERENCES:
patent: 6960804 (2005-11-01), Yang et al.
patent: 6962843 (2005-11-01), Anderson et al.
patent: 7052958 (2006-05-01), Fried et al.
patent: 7087952 (2006-08-01), Zhu et al.
patent: 7091551 (2006-08-01), Anderson et al.
patent: 7176067 (2007-02-01), Jung et al.
patent: 7183159 (2007-02-01), Rao et al.
patent: 7323375 (2008-01-01), Yoon et al.
patent: 7348246 (2008-03-01), Kim et al.
patent: 7352018 (2008-04-01), Specht et al.
patent: 7352037 (2008-04-01), Kim et al.
patent: 2003/0197221 (2003-10-01), Shinozaki et al.
patent: 2004/0235300 (2004-11-01), Mathew et al.
patent: 2005/0110087 (2005-05-01), Natzle et al.
patent: 2005/0124099 (2005-06-01), Beintner et al.
patent: 2005/0186742 (2005-08-01), Oh et al.
patent: 2005/0233565 (2005-10-01), Zhu et al .
patent: 2005/0285186 (2005-12-01), Fujiwara
patent: 2006/0046355 (2006-03-01), Parekh et al.
patent: 2006/0097310 (2006-05-01), Kim et al.
patent: 2006/0270164 (2006-11-01), Li et al.
patent: 2006/0286724 (2006-12-01), Anderson et al.
patent: 2006/0292781 (2006-12-01), Lee
patent: 2007/0085134 (2007-04-01), Anderson et al.
patent: 2004-327812 (2004-11-01), None
patent: 1020030065864 (2003-08-01), None
patent: 1020030082390 (2003-10-01), None
patent: 1020040005331 (2004-01-01), None

Affiliated with

Also associated with

Rating

FinFETs and nonvolatile memory devices including FinFETs does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with FinFETs and nonvolatile memory devices including FinFETs, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and FinFETs and nonvolatile memory devices including FinFETs will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4135692