finFETS and methods of making same

Details finFETS and methods of making same finFETS and methods of making same

2009-09-17

2011-10-25

Stark, Jarrett (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S197000, C257S347000, C257S401000

Reexamination Certificate

active

08043920

ABSTRACT:
A method of fabricating and a structure of a merged multi-fin finFET. The method includes forming single-crystal silicon fins from the silicon layer of an SOI substrate having a very thin buried oxide layer and merging the end regions of the fins by growing vertical epitaxial silicon from the substrate and horizontal epitaxial silicon from ends of the fins such that vertical epitaxial silicon growth predominates.

REFERENCES:
patent: 7199419 (2007-04-01), Haller
patent: 7692254 (2010-04-01), Anderson et al.
patent: 7851865 (2010-12-01), Anderson et al.
patent: 2011/0049583 (2011-03-01), Lin et al.

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