FinFET transistor and circuit

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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Reexamination Certificate

active

11458250

ABSTRACT:
A drive strength tunable FinFET, a method of drive strength tuning a FinFET, a drive strength ratio tuned FinFET circuit and a method of drive strength tuning a FinFET, wherein the FinFET has either at least one perpendicular and at least one angled fin or has at least one double-gated fin and one split-gated fin.

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Near-Custom Book Image, IBM Technical Disclosure Bulletin, Oct. 1992; pp. 521-524.

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