Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-05-06
2008-05-06
Ha, Nathan W (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
Reexamination Certificate
active
07368355
ABSTRACT:
A drive strength tunable FinFET, a method of drive strength tuning a FinFET, a drive strength ratio tuned FinFET circuit and a method of drive strength tuning a FinFET, wherein the FinFET has either at least one perpendicular and at least one angled fin or has at least one double-gated fin and one split-gated fin.
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Near-Custom Book Image, IBM Technical Disclosure Bulletin, Oct. 1992; pp. 521-524.
Bernstein Kerry
Nowak Edward J.
Rainey BethAnn
Ha Nathan W
International Business Machines - Corporation
Sabo William D.
Schmeiser Olsen & Watts
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