FinFET SRAM cell using low mobility plane for cell stability...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S627000, C257SE29004

Reexamination Certificate

active

07087477

ABSTRACT:
The present invention provides a device design and method for forming the same that results in Fin Field Effect Transistors having different gains without negatively impacting device density. The present invention forms relatively low gain FinFET transistors in a low carrier mobility plane and relatively high gain FinFET transistors in a high carrier mobility plane. Thus formed, the FinFETs formed in the high mobility plane have a relatively higher gain than the FinFETs formed in the low mobility plane. The embodiments are of particular application to the design and fabrication of a Static Random Access Memory (SRAM) cell. In this application, the bodies of the n-type FinFETs used as transfer devices are formed along the {110} plane. The bodies of the n-type FinFETs and p-type FinFETs used as the storage latch are formed along the {100}. Thus formed, the transfer devices will have a gain approximately half that of the n-type storage latch devices, facilitating proper SRAM operation.

REFERENCES:
patent: 3603848 (1971-09-01), Sato et al.
patent: 4933298 (1990-06-01), Hasegawa
patent: 5198683 (1993-03-01), Sivan
patent: 5698893 (1997-12-01), Perera et al.
patent: 5705414 (1998-01-01), Lustig
patent: 5945690 (1999-08-01), Saito et al.
patent: 5953606 (1999-09-01), Huang et al.
patent: 5960271 (1999-09-01), Wollesen et al.
patent: 5970330 (1999-10-01), Buynoski
patent: 6100128 (2000-08-01), Wang et al.
patent: 6180517 (2001-01-01), Liou et al.
patent: 6190949 (2001-02-01), Noguchi et al.
patent: 6194273 (2001-02-01), Matsuura et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

FinFET SRAM cell using low mobility plane for cell stability... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with FinFET SRAM cell using low mobility plane for cell stability..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and FinFET SRAM cell using low mobility plane for cell stability... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3712313

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.