Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-08-08
2006-08-08
Lee, Eugene (Department: 2815)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S627000, C257SE29004
Reexamination Certificate
active
07087477
ABSTRACT:
The present invention provides a device design and method for forming the same that results in Fin Field Effect Transistors having different gains without negatively impacting device density. The present invention forms relatively low gain FinFET transistors in a low carrier mobility plane and relatively high gain FinFET transistors in a high carrier mobility plane. Thus formed, the FinFETs formed in the high mobility plane have a relatively higher gain than the FinFETs formed in the low mobility plane. The embodiments are of particular application to the design and fabrication of a Static Random Access Memory (SRAM) cell. In this application, the bodies of the n-type FinFETs used as transfer devices are formed along the {110} plane. The bodies of the n-type FinFETs and p-type FinFETs used as the storage latch are formed along the {100}. Thus formed, the transfer devices will have a gain approximately half that of the n-type storage latch devices, facilitating proper SRAM operation.
REFERENCES:
patent: 3603848 (1971-09-01), Sato et al.
patent: 4933298 (1990-06-01), Hasegawa
patent: 5198683 (1993-03-01), Sivan
patent: 5698893 (1997-12-01), Perera et al.
patent: 5705414 (1998-01-01), Lustig
patent: 5945690 (1999-08-01), Saito et al.
patent: 5953606 (1999-09-01), Huang et al.
patent: 5960271 (1999-09-01), Wollesen et al.
patent: 5970330 (1999-10-01), Buynoski
patent: 6100128 (2000-08-01), Wang et al.
patent: 6180517 (2001-01-01), Liou et al.
patent: 6190949 (2001-02-01), Noguchi et al.
patent: 6194273 (2001-02-01), Matsuura et al.
Fried David M.
Mann Randy W.
Muller K. Paul
Nowak Edward J.
Kraig William
Lee Eugene
Sabo William D.
Schmeiser Olsen & Watts
LandOfFree
FinFET SRAM cell using low mobility plane for cell stability... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with FinFET SRAM cell using low mobility plane for cell stability..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and FinFET SRAM cell using low mobility plane for cell stability... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3712313