Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-04-17
2007-04-17
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S314000, C257S317000, C257S319000, C257S321000, C257S347000, C257SE29129, C257SE29300, C257SE29304, C257SE29309, C438S283000
Reexamination Certificate
active
11148903
ABSTRACT:
A FinFET split gate EEPROM structure includes a semiconductor substrate and an elongated semiconductor fin extending above the substrate. A control gate straddles the fin, the fin's sides and a first drain-proximate portion of a channel between a source and drain in the fin. The control gate includes a tunnel layer and a floating electrode over which are a first insulative stratum and a first conductive stratum. A select gate straddles the fin and its sides and a second, source-promixate portion of the channel. The select gate includes a second insulative stratum and a second conductive stratum. The insulative strata are portions of a continuous insulative layer covering the substrate and the fin. The conductive strata are electrically continuous portions of a continuous conductive layer formed on the insulative layer.
REFERENCES:
patent: 6413802 (2002-07-01), Hu et al.
patent: 6465836 (2002-10-01), Lin et al.
patent: 6855990 (2005-02-01), Yeo et al.
patent: 2003/0042531 (2003-03-01), Lee et al.
patent: 2005/0266638 (2005-12-01), Cho et al.
Chen Hung-Wei
Chen Kuang-Hsin
Lee Di-Hong
Tsao Hsun-Chih
Rodela Eduardo A.
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
Tran Minhloan
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