FinFET CMOS with NVRAM capability

Details FinFET CMOS with NVRAM capability FinFET CMOS with NVRAM capability

2006-05-30

2006-05-30

Nguyen, Cuong (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

Reexamination Certificate

active

07052958

ABSTRACT:
The present invention provides a device design and method for forming the same that results in Fin Field Effect Transistors having Non-Volatile Random Access Memory (NVRAM) capability. NVRAM capability arises from the presence of double floating gates arranged on and insulated from a semiconductor fin body, and a control gate arranged on and insulated from the double floating gates. The fabrication of the present device may be accomplished by: providing an SOI wafer and defining a fin on the SOI wafer, the fin may be capped with an insulator layer; providing gate insulator on at least one vertical surface of the FIN; depositing floating gate material over the gate insulator; depositing insulator material on the floating gate material to form the floating gate isolation; depositing control gate material over the isolated floating gate material; removing a portion of the control gate material to expose source and drain regions of the Fin, implanting the Fin to form source/drain regions in the exposed regions of the Fin, and providing insulator material on the Fin. In addition, the NVRAM FinFET allows for horizontal current flow.

REFERENCES:
patent: 5041886 (1991-08-01), Lee
patent: 5256584 (1993-10-01), Hartmann
patent: 5455792 (1995-10-01), Yi
patent: 5468663 (1995-11-01), Bertin et al.
patent: 5739567 (1998-04-01), Wong
patent: 6033957 (2000-03-01), Burns, Jr. et al.
patent: 6040218 (2000-03-01), Lam
patent: 6107141 (2000-08-01), Hsu et al.
patent: 6108239 (2000-08-01), Sekariapuram et al.
patent: 6114725 (2000-09-01), Furukawa et al.
patent: 6133098 (2000-10-01), Ogura et al.
patent: 6143636 (2000-11-01), Forbes et al.
patent: 6157061 (2000-12-01), Kawata
patent: 6174771 (2001-01-01), Leu
patent: 6198125 (2001-03-01), Yamazaki et al.
patent: 6303960 (2001-10-01), Wang
patent: 408162547 (1996-06-01), None

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