Fine pattern forming method

Details Fine pattern forming method Fine pattern forming method

1992-04-20

1994-05-31

Rodee, Christopher

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

430323, 430325, 430925, 430313, G03C 500

Patent

active

053168917

ABSTRACT:
A high molecular organic film as the bottom layer is coated on a semiconductor silicone substrate in a thickness of 2 .mu.m and a solution of 2,4,6-tris(trichloromethyl)-1,3,5-triazine as a crosslinking agent and poly(p-hydroxyphenylsilsesquioxane) in ethyl cellosolve acetate is coated thereon in a thickness of 0.3 .mu.m as the top layer electron beam resist. After exposure to electron beams, the resulting wafer is developed with an aqueous organic alkaline solution to give an accurate and fine negative resist pattern. Etching of the bottom layer using this resist pattern as a mask can readily form a fine resist pattern accurately in a high aspect ratio.

REFERENCES:
patent: 4863833 (1989-09-01), Fukuyama et al.
patent: 4871646 (1989-10-01), Hayase et al.
patent: 5093224 (1992-03-01), Hashimoto et al.
patent: 5198326 (1993-03-01), Hashimoto et al.
patent: 5252340 (1993-10-01), Hashimoto et al.
PCT International Publication WO/86/05284 published Sep. 12, 1986.
Hackh's Chemical Dictionary, J. Grant, McGraw-Hill Book Co., N.Y., "silicone" p. 611, 1972.

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