Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Electron beam imaging
Patent
1994-05-06
1995-12-19
Dote, Janis L.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Electron beam imaging
430270, 430313, 430317, 430323, 430326, 430330, 430942, G03C 500
Patent
active
054767539
ABSTRACT:
A high polymer organic film is applied as a bottom layer to a semiconductor silicon substrate. Then, a material including an acid generator and a polysilane resin insoluble in an alkaline solution is applied to the bottom layer as an electron beam resist layer. The polysilane resin includes a Si--Si bond or Si--O bond in a principle chain and a substituted hydroxy group expressed as --OR in a side chain wherein R denotes a substitution group of hydrocarbon. The acid generator generates an acid when irradiated with an electron beam. Then, a pattern is formed with an electron beam in the photosensitive layer, and it is developed with an alkaline solution. Then, by using the resist pattern as a mask, the bottom layer is etched. Thus, a fine resist pattern of correct high aspect ratio can be formed easily.
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"Grant & Hackh's Chemical Dictionary", 5th Edition 1987 p. 290.
The Role of the Latent Image in a New Dual Image, Aqueous Developable, Thermally Stable Photoresist. Wayne E. Feely et al., Polymer Engineering and Science, Mid-Summer, 1986, vol. 26, No. 16 pp. 1101-1104.
Endo Masayuki
Hashimoto Kazuhiko
Dote Janis L.
Matsushita Electric - Industrial Co., Ltd.
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