Fine pattern forming material and pattern forming method

Details Fine pattern forming material and pattern forming method Fine pattern forming material and pattern forming method

1993-07-19

1994-04-26

Mc Camish, Marion E.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

430313, 430317, 430323, 430325, 430330, 430942, 2504921, 2504922, 2504923, G03C 500

Patent

active

053066014

ABSTRACT:
Herein is provided a fine pattern forming method which is prevented from the charging-up phenomenon at the time of electric charged beam writing owing to the use of a polyalkylthiophene type conductive polymeric substance or a quaternary ammonium ion type polymeric substance in a monolayer or multilayer resist.

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patent: 5051338 (1991-09-01), Kato
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Todokoro: International Electron Devices Meeting Dec. 1977, pp. 753-756.
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Chemical Abstracts, vol. 108, No. 24, Jun. 13th, 1988, p. 619, abstract No. 21367r, Columbus, Ohio, US; K. Yoshino et al.: "Spectral change of polymer film containing poly(3-alkylthiophene) with temperature and its application as optical recording media", & Jpn. J. Appl. Phys., Part 2, 1988, 27(3), L454-L456.
Chemical Abstracts, vol. 93, No. 3, Aug. 1980, p. 767, abstract No. 58156s, Columbus, Ohio, US; H. Tanaka et al.: "Synthesis of polymers containing sulfide bonds in the main chain and application as positive type resist", & Kobunishi Ronbunshu 1989, 37(4), 269-74.
Patent Abstracts of Japan, vol. 8, No. 157 (P-288)(1594), Jul. 29th, 1984; & JP-A-59 053 837 (Nippon Denshin Kosha) Mar. 28, 1984.

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