Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-04-27
2010-02-23
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S401000, C438S300000
Reexamination Certificate
active
07667271
ABSTRACT:
A fin field-effect transistor (finFET) with improved source/drain regions is provided. In an embodiment, the source/drain regions of the fin are removed while spacers adjacent to the fin remain. An angled implant is used to implant the source/drain regions near a gate electrode, thereby allowing for a more uniform lightly doped drain. The fin may be re-formed by either epitaxial growth or a metallization process. In another embodiment, the spacers adjacent the fin in the source/drain regions are removed and the fin is silicided along the sides and the top of the fin. In yet another embodiment, the fin and the spacers are removed in the source/drain regions. The fins are then re-formed via an epitaxial growth process or a metallization process. Combinations of these embodiments may also be used.
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Lee, Y.-P., et al., “Selective Copper Metallization by Electrochemical Contact Displacement with Amorphous Silicon Film,” Electrochemical and Solid-State Letters, vol. 4, No. 7, 2001, pp. C47-C49.
Magagnin, L., et al., “Gold Deposition by Galvanic Displacement on Semiconductor Surfaces: Effect of Substrate on Adhesion,” J. Phys. Chem. B, vol. 106, No. 2, 2002, pp. 401-407.
Hsu Yu-Rung
Yeh Chen-Nan
Yu Chen-Hua
Patton Paul E
Slater & Matsil L.L.P.
Smith Zandra
Taiwan Semiconductor Manufacturing Company , Ltd.
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