Fin field effect transistor devices with self-aligned source...

Details Fin field effect transistor devices with self-aligned source... Fin field effect transistor devices with self-aligned source...

2011-04-12

2011-04-12

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S346000, C257S401000, C257SE29255, C438S124000, C438S151000

Reexamination Certificate

active

07923337

ABSTRACT:
Improved fin field effect transistor (FinFET) devices and methods for the fabrication thereof are provided. In one aspect, a method for fabricating a field effect transistor device comprises the following steps. A substrate is provided having a silicon layer thereon. A fin lithography hardmask is patterned on the silicon layer. A dummy gate structure is placed over a central portion of the fin lithography hardmask. A tiller layer is deposited around the dummy gate structure. The dummy gate structure is removed to reveal a trench in the filler layer, centered over the central portion of the fin lithography hardmask, that distinguishes a fin region of the device from source and drain regions of the device. The fin lithography hardmask in the fin region is used to etch a plurality of fins in the silicon layer. The trench is filled with a gate material to form a gate stack over the fins. The filler layer is removed to reveal the source and drain regions of the device, wherein the source and drain regions are intact and self-aligned with the gate stack.

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