Fin field effect transistor and method of fabricating the same

Details Fin field effect transistor and method of fabricating the same Fin field effect transistor and method of fabricating the same

2011-06-28

2011-06-28

Ha, Nathan W (Department: 2814)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C257SE29255

Reexamination Certificate

active

07968442

ABSTRACT:
A fin field effect transistor includes a fin protruding from a semiconductor substrate, a gate insulating layer formed so as to cover upper and lateral surfaces of the fin, and a gate electrode formed across the fin so as to cover the gate insulating layer. An upper edge of the fin is rounded so that an electric field concentratedly applied to the upper edge of the fin through the gate electrode is dispersed. A thickness of a portion of the gate insulating layer formed on an upper surface of the fin is greater than a thickness of a portion of the gate insulating layer formed on a lateral surface of the fin, in order to reduce an electric field applied through the gate electrode.

REFERENCES:
patent: 7297600 (2007-11-01), Oh et al.
patent: 7452776 (2008-11-01), He et al.
patent: 7514346 (2009-04-01), Chau et al.
patent: 7550333 (2009-06-01), Shah et al.
patent: 7560756 (2009-07-01), Chau et al.
patent: 7745871 (2010-06-01), Oh et al.
patent: 2004/0150029 (2004-08-01), Lee
patent: 2005/0184283 (2005-08-01), Maeda et al.
patent: 2005/0224890 (2005-10-01), Bernstein et al.
patent: 2005/0272192 (2005-12-01), Oh et al.
patent: 2008/0061383 (2008-03-01), Kawakita
patent: 2009/0108358 (2009-04-01), Lee
patent: 2010/0052043 (2010-03-01), Lee
patent: 2010/0075473 (2010-03-01), Gibbons
patent: 2008-66516 (2008-03-01), None
patent: 10-2006-0079329 (2006-07-01), None
patent: 10-2007-0024965 (2007-03-01), None

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