Fin field effect transistor and method for forming the same

Details Fin field effect transistor and method for forming the same Fin field effect transistor and method for forming the same

2011-01-04

2011-01-04

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S346000, C257S296000, C257S327000, C257SE29325, C257SE21620

Reexamination Certificate

active

07863683

ABSTRACT:
Example embodiments are directed to a method of forming a field effect transistor (FET) and a field effect transistor (FET) including a source/drain pair that is elevated with respect to the corresponding gate structure.

REFERENCES:
patent: 2003/0085424 (2003-05-01), Bryant et al.
patent: 2006/0244066 (2006-11-01), Yeo et al.
patent: 2007/0012997 (2007-01-01), Chung et al.
patent: 2007/0020902 (2007-01-01), Chung et al.
patent: 2007/0138523 (2007-06-01), Popp et al.

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