Fin FET structure

Details Fin FET structure Fin FET structure

2008-01-08

2008-01-08

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C257S347000, C257S368000, C257S410000, C257SE29022, C257SE29028, C257SE29128, C257SE29130

Reexamination Certificate

active

07317230

ABSTRACT:
A fin FET structure employs a negative word line scheme. A gate electrode of a fin FET employs an electrode doped with n+ impurity, and a channel doping for a control of threshold voltage is not executed, or the channel doping is executed by a low density, thereby remarkably improving characteristics of the fin FET. A semiconductor substrate is formed in a first conductive type, and a fin active region of a first conductive type is projected from an upper surface of the semiconductor substrate and is connected to the semiconductor substrate. An insulation layer is formed on the semiconductor substrate, and a gate insulation layer is formed in upper part and sidewall of the fin active region. A gate electrode is formed on the insulation layer and the gate insulation layer. Source and drain are formed in the fin active region of both sides of the gate electrode.

REFERENCES:
patent: 5619166 (1997-04-01), Gross
patent: 5637522 (1997-06-01), Ikemasu
patent: 5675164 (1997-10-01), Brunner et al.
patent: 5844278 (1998-12-01), Mizuno et al.
patent: 6432829 (2002-08-01), Muller et al.
patent: 6525403 (2003-02-01), Inaba et al.
patent: 6642090 (2003-11-01), Fried et al.
patent: 6765303 (2004-07-01), Krivokapic et al.
patent: 6800905 (2004-10-01), Fried et al.
patent: 6830953 (2004-12-01), Hu et al.
patent: 6919601 (2005-07-01), Inaba
patent: 6960781 (2005-11-01), Currie et al.
patent: 2004/0150029 (2004-08-01), Lee
patent: 2004/0173812 (2004-09-01), Currie et al.
patent: 2004/0217433 (2004-11-01), Yeo et al.
patent: 2005/0051843 (2005-03-01), Inaba
patent: 2005/0067670 (2005-03-01), Hui
patent: 2005/0124120 (2005-06-01), Du et al.

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