Fin device with capacitor integrated under gate electrode

Details Fin device with capacitor integrated under gate electrode Fin device with capacitor integrated under gate electrode

2007-06-12

2010-06-22

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S197000, C438S212000, C438S268000, C438S280000, C438S283000, C438S301000, C438S585000

Reexamination Certificate

active

07741184

ABSTRACT:
A fin-type field effect transistor (FinFET) has a fin having a center channel portion, end portions comprising source and drain regions, and channel extensions extending from sidewalls of the channel portion of the fin. The structure also includes a gate insulator covering the channel portion and the channel extensions, and a gate conductor on the gate insulator. The channel extensions increase capacitance of the channel portion of the fin.

REFERENCES:
patent: 5391506 (1995-02-01), Tada et al.
patent: 5563077 (1996-10-01), Ha
patent: 6720619 (2004-04-01), Chen et al.
patent: 2003/0042531 (2003-03-01), Lee et al.
patent: 2003/0151077 (2003-08-01), Mathew et al.
patent: 2004/0197975 (2004-10-01), Krivokapic et al.
patent: 2006/0084211 (2006-04-01), Yang et al.

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