Fin-based double poly dynamic threshold CMOS FET with spacer...

Details Fin-based double poly dynamic threshold CMOS FET with spacer... Fin-based double poly dynamic threshold CMOS FET with spacer...

2005-07-05

2005-07-05

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S206000, C438S267000

Reexamination Certificate

active

06913960

ABSTRACT:
The present invention provides a dynamic threshold (DT) CMOS FET and a method for forming the same that results in improved device performance and density. The preferred embodiment of the present invention provides a DT CMOS FET with a short, low resistance connection between the gate and the body and with low body-source/drain capacitance. The low body-source/drain capacitance is achieved using a thin, fin-type body. The low resistance connection between the gate and the body contact is achieved by having the gate and body contact aligned on opposite long sides of the fin with a bridge over the top of the narrow fin electrically connecting the gate and body.

REFERENCES:
patent: 5729039 (1998-03-01), Beyer et al.
patent: 5780899 (1998-07-01), Hu et al.
patent: 6100564 (2000-08-01), Bryant et al.
patent: 6100565 (2000-08-01), Ueda
patent: 6100567 (2000-08-01), Burr
patent: 6118155 (2000-09-01), Voldman
patent: 6124613 (2000-09-01), Kokubun
patent: 6154091 (2000-11-01), Pennings et al.
patent: 6159807 (2000-12-01), Bryant et al.
patent: 6177708 (2001-01-01), Kuang et al.
patent: 6191449 (2001-02-01), Shino
patent: 6204532 (2001-03-01), Gambino et al.
patent: 6569715 (2003-05-01), Forbes

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