Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2006-03-20
2008-08-26
Fahmy, Wael (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S347000, C257S499000, C257S618000, C257SE27001
Reexamination Certificate
active
07417297
ABSTRACT:
SOI wafers are manufactured to have very thin device layers of high surface quality. The layer is ≦20 nm in thickness, has an HF density of ≦0.1/cm2, and a surface roughness of 0.2 nm RMS.
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Ammon Wilfried Von
Moreland James
Murphy Brian
Schmolke Rüdiger
Wahlich Reinhold
Brooks & Kushman P.C.
Fahmy Wael
Novacek Christy L
Siltronic AG
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