Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-05-31
2005-05-31
Cuneo, Kamand (Department: 2829)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S758000, C438S761000, C438S762000, C438S770000, C438S773000, C438S787000, C438S791000
Reexamination Certificate
active
06900144
ABSTRACT:
A film-forming surface reforming method includes the steps of bringing a gas or an aqueous solution containing ammonia, hydrazine, an amine, an amino compound or a derivative thereof into contact with the film-forming surface before an insulating film is formed on the film-forming surface, and bringing a gas or an aqueous solution containing Hydrogen peroxide, ozone, Oxygen, nitric acid, sulfuric acid or a derivative thereof into contact with the film-forming surface.
REFERENCES:
patent: 5424253 (1995-06-01), Usami et al.
patent: 5470800 (1995-11-01), Muroyama
patent: 5605867 (1997-02-01), Sato et al.
patent: 5656337 (1997-08-01), Park et al.
patent: 0 421 075 (1990-07-01), None
patent: 1 058 301 (1994-09-01), None
patent: 0 947 604 (1998-05-01), None
patent: 1 058 301 (1999-02-01), None
patent: 1342637 (1997-10-01), None
patent: 05-198369 (1993-10-01), None
patent: 5-259297 (1993-10-01), None
patent: 5-343394 (1993-12-01), None
patent: 6-181205 (1994-06-01), None
patent: 6-283508 (1994-08-01), None
patent: 6-267939 (1994-09-01), None
patent: 7-29901 (1995-01-01), None
patent: 7-50295 (1995-02-01), None
patent: 7-58100 (1995-03-01), None
patent: 7-99191 (1995-04-01), None
patent: 7-122552 (1995-05-01), None
patent: 9-129632 (1997-05-01), None
patent: 9-148324 (1997-06-01), None
patent: 9-205089 (1997-08-01), None
patent: 11-74485 (1999-03-01), None
patent: 11-111714 (1999-04-01), None
patent: 11-288933 (1999-10-01), None
patent: 2001-176868 (2001-06-01), None
patent: 1995-7032 (1995-03-01), None
Ghandi, VLSI Fabrication Principles, 2ndEd.,© 1994, pp. 640-641.*
Chemical search report: www.chemfinder.com (3pages).*
Silicon Processing for the VLSI Era, vol. 2—Process Integration. By Stanley. Wolf PhD. pp. 196-199.
Azumi Takayoshi
Maeda Kazuo
Sasaki Kiyotaka
Suzuki Setsu
Canon Sales Co., Inc.
Kilday Lisa
Lorusso, Loud & Kelly
Semiconductor Process Laboratory Co. Ltd.
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