Film-forming on substrate by sputtering

Details Film-forming on substrate by sputtering Film-forming on substrate by sputtering

1991-07-12

1992-08-18

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419223, C23C 1434

Patent

active

051396335

ABSTRACT:
In a process for the deposition of a film of an inorganic substance such as silicon carbide on the surface of a substrate such as a silicon wafer by the method of sputtering, as in the process for the preparation of a membrane to serve as an X-ray lithographic mask, using a target disc and a substrate disc held in parallel to each other, uniformity in the internal stress of the deposited film can be improved by displacing the target or the substrate relative to each other during the sputtering procedure in the direction parallel to the surface of the target or substrate in a distance of at least 1 mm.

REFERENCES:
patent: 4022947 (1977-05-01), Grubb et al.
patent: 4132624 (1979-01-01), King et al.
patent: 4437966 (1984-03-01), Hope et al.
patent: 4851095 (1989-07-01), Scobey et al.
patent: 4988424 (1991-01-01), Woodward et al.
J. of Vac. Sci. Sci. Technol., vol. 8, May 1990, S. Swann et al, "Film Thickness distribution control with off-axis . . . " pp. 1299-1303.
Patent Abstracts of Japan, vol. 10, 199 Jul. 11, 1986, JP A-61-041766 Hitachi Ltd. Feb. 28, 1986.
Patent Abstracts of Japan, vol. 12, 446 Nov. 24, 1988, JP-A-63-171880 Fuji Electric Co., Jul. 15, 1988.
Patent Abstracts of Japan, vol. 10, 245, Aug. 22, 1986, JP A-61- 0766763 Fujitsu Ltd. Apr. 19, 1986.
Patent Abstracts of Japan, vol. 6, 214, Oct. 27, 1982, JP A 57-120669 Mitsubishi Denki K.K. Jul. 27, 1982.
Patent Abstracts of Japan, vol. 6, 54, Apr. 9, 1982, JP A 56-166375 Kokusai Electric Co., Ltd., Dec. 21, 1981.
Patent Abstracts of Japan, vol. 7, 281, Dec. 15, 1983, JP A 58-161993 Nippon Denshin Denwa Kosha, Sep. 26, 1983.

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