Film forming method, film forming system and recording medium

Details Film forming method, film forming system and recording medium Film forming method, film forming system and recording medium

2005-12-08

2008-08-26

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21170

Reexamination Certificate

active

07416978

ABSTRACT:
After silicon nitride films have been formed on wafers by a film forming process in a reaction vessel, the reaction vessel is processed by a purging process specified by a purging recipe and compatible with the film forming process to suppress production of gases and particles by removing surface parts of films deposited on the inside surface of the reaction vessel and causative of production of gases and particles.A wafer boat25holding a plurality of wafers W is loaded into a reaction vessel2, and the wafers W are processed by a film forming process specified by a film forming recipe1specifying, for example, Si2Cl2gas and NH3gas as film forming gases. Subsequently, a purging recipe1specifying a purging process compatible to the film forming process is selected automatically, and the reaction vessel2is processed by the purging process specified by the purging recipe1. A purging recipe is selected automatically from a plurality of purging recipes specifying purging processes respectively compatible with film forming processes. Unnecessary extension of purging time is suppressed and the reaction vessel2can be processed by an appropriate purging process compatible with the film forming process.

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JPO Office Action dated Mar. 25, 2008.

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