Film forming method and semiconductor device manufacturing metho

Details Film forming method and semiconductor device manufacturing metho Film forming method and semiconductor device manufacturing metho

1997-04-24

1999-06-22

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438789, 438790, 438784, H01L 21443

Patent

active

059152001

ABSTRACT:
A film forming method is provided for forming a planarized interlayer insulating film for covering interconnection layers, etc. of a semiconductor integrated circuit device. While supplying a reaction gas including a phosphorus containing compound which has III valence phosphorus and at least one bond of phosphorus to oxygen, a silicon containing insulating film including P.sub.2 O.sub.3 is formed on a deposition substrate, thereby greatly reducing fluidization temperature for planarization.

REFERENCES:
patent: 4708884 (1987-11-01), Chandross et al.
patent: 5409743 (1995-04-01), Bouffard et al.
D.S. Williams, et al. "LPCVD of Borophosphosilicate Glass from Organic Reactants" Electrochem. Soc.: Solid State Science and Technology vol 134, No. 3, pp. 657-664, Mar. 1987.
R.M. Levin et al. "The Step Coverage of Undoped and Phosphorus-doped SiO.sub.2 glass films" J. Vac. Sci. Tech. B 1(1) pp. 54-61, Jan.-Mar. 1983.
J. Sato et al. "Very low temperature CVD of SiO.sub.2 films using ozone and organosilane" Extended Abstracts of the Spring Meeting of the Electrochemical Soc. pp. 31-33, May 1971.

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