Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1999-06-11
2000-08-29
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438784, 438789, 438790, H01L 214763
Patent
active
061108146
ABSTRACT:
The present invention relates to a film forming method for forming a planarized interlayer insulating film to cover wiring layers, etc. of a semiconductor integrated circuit device. The method includes the steps of forming on a substrate 206, a phosphorus-containing insulating film 45a containing P.sub.2 O.sub.3 by using a film forming gas in which an oxidizing. gas is added into a gas mixture including a phosphorus-containing compound, which has III valence phosphorus and in which oxygen is bonded to at least one bond of the III valence phosphorus, and silicon-containing compound, or by using the film forming gas from which the oxidizing gas removed, heating the phosphorus-containing insulating film 45a while applying acceleration to the insulating film 45a to fluidize the insulating film and thus planarize a surface of the insulating film 45b while the insulating film 45a has a predetermined viscosity, and heating further the insulating film 45b after the surface of the insulating film 45b has been planarized, to sublimate P.sub.2 O.sub.3 in the insulating film 45b and thus solidify the insulating film 45b.
REFERENCES:
patent: 5028566 (1991-07-01), Lagendijk
patent: 5262358 (1993-11-01), Sigmund et al.
patent: 5319247 (1994-06-01), Matsuura
patent: 5459105 (1995-10-01), Matsuura
patent: 5721156 (1998-02-01), Matsuura
patent: 5772716 (1998-06-01), Krohm et al.
patent: 5776236 (1999-06-01), Neuman et al.
patent: 5915200 (1999-06-01), Tokumasu et al.
Maeda Kazuo
Tokumasu Noboru
Canon Sales Co., Inc.
Gurley Lynne A.
Niebling John F.
Semiconductor Process Laboratory Co. Ltd.
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