Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2011-07-19
2011-07-19
Graybill, David E (Department: 2894)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
Reexamination Certificate
active
07981809
ABSTRACT:
A film formation method for a semiconductor process for forming a silicon oxynitride film on a target substrate within a reaction chamber includes a step of performing a pre-process on members inside the reaction chamber without the target substrate loaded therein, and a step of then forming a silicon oxynitride film on the target substrate within the reaction chamber. The pre-process is arranged to supply a pre-process gas containing a nitriding gas or oxynitriding gas into the reaction chamber, and setting an interior of the reaction chamber at a first temperature and a first pressure.
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Shibata Tetsuya
Takahashi Yutaka
Tomita Masahiko
Umezawa Kota
Graybill David E
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Tokyo Electron Limited
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