Film formation method and apparatus for semiconductor process

Details Film formation method and apparatus for semiconductor process Film formation method and apparatus for semiconductor process

2011-07-19

2011-07-19

Graybill, David E (Department: 2894)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

Reexamination Certificate

active

07981809

ABSTRACT:
A film formation method for a semiconductor process for forming a silicon oxynitride film on a target substrate within a reaction chamber includes a step of performing a pre-process on members inside the reaction chamber without the target substrate loaded therein, and a step of then forming a silicon oxynitride film on the target substrate within the reaction chamber. The pre-process is arranged to supply a pre-process gas containing a nitriding gas or oxynitriding gas into the reaction chamber, and setting an interior of the reaction chamber at a first temperature and a first pressure.

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