Film formation apparatus and method of using the same

Details Film formation apparatus and method of using the same Film formation apparatus and method of using the same

2005-04-21

2008-05-06

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

C438S680000, C438S682000, C438S710000, C438S758000, C438S784000, C438S785000, C438S900000, C257SE21219

Reexamination Certificate

active

07368384

ABSTRACT:
A method of using a film formation apparatus for a semiconductor process includes a step of removing a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus. This step is performed while supplying a cleaning gas containing hydrogen fluoride into the reaction chamber, and forming a first atmosphere within the reaction chamber, which allows water to be present as a liquid film.

REFERENCES:
patent: 6095158 (2000-08-01), Shugrue
patent: 6164295 (2000-12-01), Ui et al.
patent: 3-293726 (1991-12-01), None

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