Method of fabricating a transistor

Details Method of fabricating a transistor Method of fabricating a transistor

2006-12-22

2008-05-20

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

C438S151000, C438S154000, C438S199000, C438S300000, C438S302000, C257S315000, C257SE21427, C257SE21703

Reexamination Certificate

active

07374975

ABSTRACT:
A method of forming a transistor reduces leakage current and hot carrier effects, and therefore improves current performance. The method of forming a transistor includes selectively etching the semiconductor substrate to form a substrate protrusion and expose a buried source/drain implant region. A gate insulating layer covers the substrate protrusion and the first source/drain region. A gate conductor layer is selectively etched to form a gate pattern covering the sidewalls of the substrate protrusion and a portion of the semiconductor substrate adjacent to the sidewalls of the substrate protrusion. A second source/drain region is stacked over the top of the substrate protrusion. Contacts connected to the gate pattern and the first and second source/drain regions.

REFERENCES:
patent: 2005/0139911 (2005-06-01), Kim
patent: 2005/0142730 (2005-06-01), Kim
patent: 2006/0263985 (2006-11-01), Kang et al.

Affiliated with

Also associated with

Rating

Method of fabricating a transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3985363