Film formation apparatus and method of using the same

Details Film formation apparatus and method of using the same Film formation apparatus and method of using the same

2005-12-21

2009-11-10

Alanko, Anita K (Department: 1792)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C438S685000, C438S706000, C438S722000, C438S785000, C438S905000, C134S001300, C134S022100

Reexamination Certificate

active

07615163

ABSTRACT:
A method of using a film formation apparatus for a semiconductor process includes processing by a cleaning gas a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus. This step is arranged to supply the cleaning gas into the reaction chamber, and set an interior of the reaction chamber at a first temperature and a first pressure. The by-product film mainly contains a high-dielectric-constant material. The cleaning gas contains chlorine without containing fluorine. The first temperature and the first pressure are set to activate chlorine in the cleaning gas.

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