Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2008-10-07
2011-12-20
Norton, Nadine G (Department: 1713)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S706000, C134S001000, C134S001100, C134S001300, C134S019000, C118S7230MP, C257SE21483, C257SE21294
Reexamination Certificate
active
08080477
ABSTRACT:
A method for using a film formation apparatus for a semiconductor process to form a thin film on a target substrate inside a reaction chamber includes performing a cleaning process to remove a by-product film deposited on a predetermined region in a gas route from a film formation gas supply system, which supplies a film formation gas contributory to film formation, through the reaction chamber to an exhaust system, by alternately repeating an etching step and an exhaust step a plurality of times in a state where the reaction chamber does not accommodate the target substrate. The etching step includes supplying a cleaning gas in an activated state for etching the by-product film onto the predetermined region, thereby etching the by-product film. The exhaust step includes stopping supply of the cleaning gas and exhausting gas by the exhaust system from a space in which the predetermined region is present.
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Hasebe Kazuhide
Matsunaga Masanobu
Nodera Nobutake
Sato Jun
Dahimene Mahmoud
Norton Nadine G
Smith , Gambrell & Russell, LLP
Tokyo Electron Limited
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