Film formation apparatus and method for semiconductor process

Coating apparatus – Gas or vapor deposition

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C118S7230VE, C118S7230ER, C118S7230MP, C117S089000, C117S206000, C427S255320, C427S255380, C427S255393, C428S698000, C438S491000, C438S495000, C438S566000, C438S784000

Reexamination Certificate

active

07959733

ABSTRACT:
A film formation apparatus for a semiconductor process includes a source gas supply circuit to supply into a process container a source gas for depositing a thin film on target substrates, and a mixture gas supply circuit to supply into the process container a mixture gas containing a doping gas for doping the thin film with an impurity and a dilution gas for diluting the doping gas. The mixture gas supply circuit includes a gas mixture tank disposed outside the process container to mix the doping gas with the dilution gas to form the mixture gas, a mixture gas supply line to supply the mixture gas from the gas mixture tank into the process container, a doping gas supply circuit to supply the doping gas into the gas mixture tank, and a dilution gas supply circuit to supply the dilution gas into the gas mixture tank.

REFERENCES:
patent: 3605785 (1971-09-01), Dobritz
patent: 3841344 (1974-10-01), Slack
patent: 4100310 (1978-07-01), Ura et al.
patent: 4279670 (1981-07-01), Steele
patent: 4661427 (1987-04-01), Kanai
patent: 4683147 (1987-07-01), Eguchi et al.
patent: 4773355 (1988-09-01), Reif et al.
patent: 5487346 (1996-01-01), Taylor
patent: 5654230 (1997-08-01), Jintate et al.
patent: 5925188 (1999-07-01), Oh
patent: 6630201 (2003-10-01), Chiang et al.
patent: 6846516 (2005-01-01), Yang et al.
patent: 6864507 (2005-03-01), Yokogawa et al.
patent: 6913031 (2005-07-01), Nawata et al.
patent: 6962859 (2005-11-01), Todd et al.
patent: 7063097 (2006-06-01), Arno et al.
patent: 7084078 (2006-08-01), Ahn et al.
patent: 7125815 (2006-10-01), Vaartstra
patent: 2002/0106846 (2002-08-01), Seutter et al.
patent: 6-35544 (1994-02-01), None
patent: 6-26247 (1994-04-01), None
patent: 6-216114 (1994-08-01), None
patent: 2000-235951 (2000-08-01), None
patent: 2003-282566 (2003-10-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Film formation apparatus and method for semiconductor process does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Film formation apparatus and method for semiconductor process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Film formation apparatus and method for semiconductor process will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2692026

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.