Field plate avalanche diode

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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H01L 2990

Patent

active

054344425

ABSTRACT:
A field plate avalanche diode has a field plate extending over the breakdown PN junction.

REFERENCES:
patent: 3560810 (1971-02-01), Balk et al.
patent: 4103227 (1978-07-01), Zemel
patent: 4115709 (1978-09-01), Inoue et al.
patent: 4193935 (1979-02-01), Bertin et al.
patent: 4868621 (1989-09-01), Miyamoto
patent: 4987465 (1991-01-01), Longcor et al.

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