Field emission device with lattice vacancy, post-supported gate

Electric lamp or space discharge component or device manufacturi – Process – With assembly or disassembly

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445 49, 445 50, H01J 130, H01J 918

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active

057116946

ABSTRACT:
An electron emitter plate (110) for an FED image display has an extraction (gate) electrode (22) spaced by a dielectric insulating spacer (125) from a cathode electrode including a conductive mesh (18). Arrays (12) of microtips (14) are located in mesh spacings (16), within apertures (26) formed in clusters (23) in extraction electrode (22). Microtips (14) are deposited through the apertures (26). Apertures (26) are arranged in regular, periodic arrays (23, 23', 123, 123') defining lattices having occupied apertured positions and internal unapertured vacancy positions (150, 150'). The insulating spacer (125) is etched to undercut electrode (22) to connect apertured lattice positions, forming a common cavity (141) for microtips (14) within each mesh spacing (16), and leaving central posts (143) at the unapertured vacancies (150, 150'). The etch-out reduces the dielectric constant factor of gate-to-cathode capacitance in the finished structure. Placing posts at vacancy positions enables gate support over the cavity without sacrificing high microtip density.

REFERENCES:
patent: 3998678 (1976-12-01), Fukase et al.
patent: 5482486 (1996-01-01), Vaudaine et al.
patent: 5507676 (1996-04-01), Taylor

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