Field-effect type semiconductor device for power amplifier

Details Field-effect type semiconductor device for power amplifier Field-effect type semiconductor device for power amplifier

2006-05-16

2006-05-16

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S046000, C438S232000, C438S285000, C438S933000

Reexamination Certificate

active

07045412

ABSTRACT:
In a semiconductor multi-layer structure in which a first SiGe layer having a first conductivity-type and high impurity concentration, a second SiGe layer having the first conductivity-type and a low impurity concentration and a Si layer having a low impurity concentration are formed one on another in this order on a Si substrate of the first conductivity-type, a channel is formed in a part of the Si layer and a source electrode passes through the second SiGe layer of low impurity concentration to electrically contact the first SiGe layer of high impurity concentration or the substrate.

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