Field effect transistors with dielectric source drain halo...

Details Field effect transistors with dielectric source drain halo... Field effect transistors with dielectric source drain halo...

2007-10-01

2009-11-17

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S311000, C438S954000, C257SE21170, C257SE21051, C257SE21218, C257SE21227, C257SE21229, C257SE21320, C257SE21267, C257SE21435

Reexamination Certificate

active

07618853

ABSTRACT:
A field effect transistor (FET) device includes a gate conductor and gate dielectric formed over an active device area of a semiconductor substrate. A drain region is formed in the active device area of the semiconductor substrate, on one side of the gate conductor, and a source region is formed in the active device area of the semiconductor substrate, on an opposite side of the gate conductor. A dielectric halo or plug is formed in the active area of said semiconductor substrate, the dielectric halo or plug disposed in contact between the drain region and a body region, and in contact between the source region and the body region.

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