Field effect transistors, methods of fabricating a...

Details Field effect transistors, methods of fabricating a... Field effect transistors, methods of fabricating a...

2010-09-10

2011-12-27

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S278000, C257SE21270, C257SE21409

Reexamination Certificate

active

08084371

ABSTRACT:
Field effect transistors, methods of fabricating a carbon insulating layer using molecular beam epitaxy and methods of fabricating a field effect transistor using the same are provided, the methods of fabricating the carbon insulating layer include maintaining a substrate disposed in a molecular beam epitaxy chamber at a temperature in a range of about 300° C. to about 500° C. and maintaining the chamber in vacuum of 10−11Torr or less prior to performing an epitaxy process, and supplying a carbon source to the chamber to form a carbon insulating layer on the substrate. The carbon insulating layer is formed of diamond-like carbon and tetrahedral amorphous carbon.

REFERENCES:
patent: 6621535 (2003-09-01), Fukuda
patent: 7355247 (2008-04-01), Shaheen et al.
patent: 7687876 (2010-03-01), Kabir
patent: 2006/0011942 (2006-01-01), Kim et al.
patent: 2006/0220028 (2006-10-01), Shaheen et al.
patent: 2007/0026536 (2007-02-01), Kim et al.
patent: 62-29166 (1987-02-01), None
patent: 06-13315 (1994-01-01), None
patent: 11-307782 (1999-11-01), None
patent: 2000-353307 (2000-12-01), None
patent: 2007-67048 (2007-03-01), None
patent: 10-2007-0014699 (2007-02-01), None

Affiliated with

Also associated with

Rating

Field effect transistors, methods of fabricating a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field effect transistors, methods of fabricating a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect transistors, methods of fabricating a... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4304256