Field effect transistors including side branch grooves and fabri

Details Field effect transistors including side branch grooves and fabri Field effect transistors including side branch grooves and fabri

1997-05-06

1998-09-08

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257328, 257330, 257331, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

058048634

ABSTRACT:
A field effect transistor includes radially extending grooves in a microelectronic substrate. At least one of the radially extending grooves includes a side branch groove extending from it. A ring-shaped gate is included on the radially extending grooves. The ring-shaped gate defines inner and outer regions of the microelectronic substrate. Source and drain regions are included in the respective inner and outer regions of the microelectronic substrate. The side branch grooves may be used to decrease on-state resistance and increase drive current of the field effect transistor.

REFERENCES:
patent: 4072975 (1978-02-01), Ishitani
patent: 4393391 (1983-07-01), Blanchard
patent: 5095343 (1992-03-01), Klodzinski et al.
patent: 5192989 (1993-03-01), Matsushita et al.
patent: 5418394 (1995-05-01), Hertrich
patent: 5442216 (1995-08-01), Gough
patent: 5444275 (1995-08-01), Kugishima et al.
patent: 5453637 (1995-09-01), Fong-Chun et al.
patent: 5698880 (1997-12-01), Takahashi et al.

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